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APTM50UM25S
Single switch Series & parallel diodes MOSFET Power Module
SK CR1 D
VDSS = 500V RDSon = 25m max @ Tj = 25C ID = 149A @ Tc = 25C
Application * * * Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
S
Q1
Features
G
*
* * * Benefits * * *
Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50UM25S - Rev 1 June, 2004
Tc = 25C
Max ratings 500 149 110 550 30 25 1250 41 50 1600
Unit V A V m W A
APTM50UM25S
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V, ID = 500A Min 500
VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V
Tj = 25C Tj = 125C
Typ
Max 400 1000 25 5 200
Unit V A m V nA Unit nF
VGS = 10V, ID = 74.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 149A Inductive Switching @ 125C VGS = 15V VBus = 333V ID = 149A R G = 1.2
3
Dynamic Characteristics
Min
Typ 17.5 3.6 0.24 364 96 196 15 21 73 52
Max
nC
ns
Series diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s IF = 120A VR = 133V di/dt = 400A/s Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/s IF = 100A VR = 400V di/dt = 200A/s
Min Tc = 85C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Tc = 80C
Typ 120 1.1 1.4 0.9 31 60 120 500
Max 1.15
Unit A V
ns nC
Parallel diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
180 220 390 1450
ns nC
APT website - http://www.advancedpower.com
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APTM50UM25S - Rev 1 June, 2004
Typ 100 1.6 1.9 1.4
Max 1.8
Unit A V
APTM50UM25S
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.1 0.46 0.6 150 125 100 1.2 5 400 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6
Package outline
Mounting holes: 4x6.5 mm
APT website - http://www.advancedpower.com
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APTM50UM25S - Rev 1 June, 2004
APTM50UM25S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 480 I D, Drain Current (A) 400 320 240 160 80 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 74.5A
Transfert Characteristics
VGS =10&15V
8V
7.5V 7V 6.5V 6V 5.5V I D, Drain Current (A)
480 400 320 240 160 80 0
25 TJ =25C TJ =125C TJ=-55C
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0
VGS=10V
120 80
VGS=20V
40
0 80 160 240 320 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (C) 150
APT website - http://www.advancedpower.com
4-6
APTM50UM25S - Rev 1 June, 2004
APTM50UM25S
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=74.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 100s
100
limited by RDSon
1ms 10 Single pulse TJ =150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms
Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=149A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 80 160 240 320 400 480 560 Gate Charge (nC)
VDS=400V
1000 Crss 100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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APTM50UM25S - Rev 1 June, 2004
APTM50UM25S
Delay Times vs Current 80 td(off)
V DS =333V RG =1.2 T J=125C L=100H
Rise and Fall times vs Current 100 80 t r and tf (ns) 60 40 20 0 tr
VDS=333V RG=1.2 TJ=125C L=100H
t d(on) and td(off) (ns)
60
tf
40
20
td(on)
0 40 80 120 160 200 240 ID, Drain Current (A) 280
40
80
120
160
200
240
280
ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 2 Eon
V DS =333V ID=149A T J=125C L=100H
Switching Energy vs Current 7.2 Switching Energy (mJ) 6 4.8 3.6 2.4 1.2 0 40 80 120 160 200 240 I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VDS=333V D=50% RG=1.2 TJ=125C VDS=333V RG=1.2 TJ=125C L=100H
Eon
Eoff
Eoff
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
450
1000
TJ =150C 100
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50UM25S - Rev 1 June, 2004

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